Memristor-based crossbar array is one of the most promising structure for in-memory computing platforms. In a crossbar array, material implication logic (IMPLY) can be performed between different word lines or bit lines. Not-material implication (N-IMPLY) can only be performed between the bit lines. This brief demonstrates the feasibility of the execution of N-IMPLY logic between the word lines, followed by an approach for logic gate design in which two logics IMPLY and N-IMPLY are integrated into one crossbar array. Both two logics can be performed between the cells in different rows and columns within the crossbar. Six basic Boolean gates are implemented utilizing the proposed approach, with a lower number of operation steps and memristors compared to the IMPLY-only method. Moreover, a 1-bit full adder is implemented by utilizing the designed logic gates. The performance and area overhead have been improved by the proposed approach, in comparison to the existing methods.

中文翻译：

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将两个逻辑集成到一个用于逻辑门设计的交叉开关阵列

基于忆阻器的交叉阵列是内存计算平台最有前途的结构之一。在交叉阵列中，可以在不同的字线或位线之间执行材料隐含逻辑（IMPLY）。非物质暗示（N-IMPLY）只能在位线之间进行。该简介展示了在字线之间执行 N-IMPLY 逻辑的可行性，然后是一种逻辑门设计方法，其中将两个逻辑 IMPLY 和 N-IMPLY 集成到一个纵横阵列中。可以在交叉开关内不同行和列的单元格之间执行这两种逻辑。使用所提出的方法实现了六个基本布尔门，与仅 IMPLY 方法相比，操作步骤和忆阻器数量较少。而且，利用所设计的逻辑门实现了一个 1 位全加器。与现有方法相比，所提出的方法提高了性能和面积开销。