As a representative of the third-generation semiconductors, ZnO has great development potential in the fields of optics and electricity, so the measurement on its electrical properties is quite important. Here, we try to extract the carrier concentration and mobility of ZnO by mid-infrared reflectance spectroscopy. Considering that the longitudinal optical phonon-plasmon coupling (LOPC) mode formed by the coupling of ZnO optical phonons and free carriers depends on carrier concentration and mobility, we conduct a test on the MIR spectra (400-1600 cm⁻¹) of ZnO crystals with different carrier concentration (10¹⁸-10¹⁵ cm⁻³). By fitting the strong reflection peak shape corresponding to phonon-polaritons formed by the coupling of its LOPC and infrared light through m-CDF model, the carrier concentration and mobility of these samples are obtained, which are consistent with those got from the Hall-effect measurement.

ZnO作为第三代半导体的代表，在光学和电学领域具有巨大的发展潜力，因此对其电学性质的测量具有重要意义。在这里，我们尝试通过中红外反射光谱提取 ZnO 的载流子浓度和迁移率。考虑到ZnO光学声子与自由载流子耦合形成的纵向光学声子-等离子体耦合（LOPC）模式取决于载流子浓度和迁移率，我们对ZnO晶体的MIR光谱（400-1600 cm ^-1）进行了测试不同载流子浓度 (10 ¹⁸ -10 ¹⁵  cm ^-3）。通过m-CDF模型拟合其LOPC与红外光耦合形成的声子极化子对应的强反射峰形，得到这些样品的载流子浓度和迁移率，与霍尔效应得到的结果一致测量。