A three-phase half-bridge insulated gate bipolar transistor (IGBT) module is designed and prototyped as the assembly of heat sink-substrate-post-chip-substrate-heat sink to realize high power density and good thermal performance for electric and hybrid electric vehicle applications. This paper reports the failure modes different from those fatigue of the chip-near interconnections in the conventional IGBT modules and a method to identify the weak points in two IGBT module samples during power cycling tests with timescale of seconds. Details presented include packaging structure and advantages of the designed IGBT module, conditions of the power cycling tests, thermal performance and power cycling lifetimes of the two module samples, small ranges containing the weak points to be determined with the recorded V_CE parameters, the exact weak points, failure modes and mechanisms to be identified with optical microscopy and scanning electronic microscopy observation. The results obtained can be used as feedback to optimize the design and further improve the power cycling reliability of the present double side cooled IGBT module. The principle established through this work can also be applied to optimize the thermo-mechanical design and improve the reliability of other double side cooled power modules.

设计并制作了三相半桥绝缘栅双极晶体管（IGBT）模块作为散热器-基板-后芯片-基板-散热器的组件，以实现电动和混合动力的高功率密度和良好的热性能车辆应用。本文报告了不同于传统 IGBT 模块中芯片附近互连疲劳的失效模式，以及在时间尺度为秒的功率循环测试中识别两个 IGBT 模块样本中弱点的方法。展示的详细信息包括设计的 IGBT 模块的封装结构和优势、功率循环测试的条件、两个模块样品的热性能和功率循环寿命、包含要通过记录的 V _CE确定的弱点的小范围通过光学显微镜和扫描电子显微镜观察确定的参数、确切的弱点、失效模式和机制。所获得的结果可作为反馈来优化设计并进一步提高当前双侧冷却 IGBT 模块的功率循环可靠性。通过这项工作建立的原理也可以应用于优化热机械设计和提高其他双侧冷却功率模块的可靠性。