Microelectronics Journal ( IF 2.2 ) Pub Date : 2021-07-30 , DOI: 10.1016/j.mejo.2021.105189 Jinlong Hu 1, 2 , Huachao Xu 1, 2 , Jin Wang 1, 2 , Ke Liang 1, 2 , Chao Lu 3 , Guofeng Li 1, 2
This paper proposes a picowatt voltage reference for Internet-of-Things applications, which require fast response speed and high insensitivity to variations of the process, supply voltage, and temperature (PVT). By employing a novel topology with a startup circuit and an effective PVT compensation method, the proposed voltage reference can achieve both high PVT stability and shorten the setup time. Based on a 0.18 μm standard CMOS process, post-layout simulation results show that the proposed design achieves a mean reference voltage of 755.6 mV with a variation coefficient of 0.11 % without trimming. The line regulation is 13.2 ppm/V over a supply voltage from 1 V to 1.8 V at 27 °C. The average temperature coefficient is about 26 ppm/°C in a temperature range from −20 °C to 120 °C. The 1 % settling time of the output reference voltage is about 274 μs.
中文翻译:
具有 PVT 补偿和快速启动的 26 ppm/oC、13.2 ppm/V、0.11% 误差皮瓦电压基准
本文为需要快速响应速度和对过程、电源电压和温度 (PVT) 变化高度不敏感的物联网应用提出了皮瓦电压参考。通过采用具有启动电路的新型拓扑和有效的 PVT 补偿方法,所提出的电压基准可以实现高 PVT 稳定性并缩短设置时间。基于 0.18 μm 标准 CMOS 工艺,布局后仿真结果表明,该设计实现了 755.6 mV 的平均参考电压,变化系数为 0.11%,无需微调。在 27 °C 时,电源电压范围为 1 V 至 1.8 V,线路调节率为 13.2 ppm/V。在 -20 °C 至 120 °C 的温度范围内,平均温度系数约为 26 ppm/°C。