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Methods to achieve ultra-high quality factor silicon nitride resonators
APL Photonics ( IF 5.6 ) Pub Date : 2021-07-12 , DOI: 10.1063/5.0057881
Xingchen Ji 1 , Samantha Roberts 1 , Mateus Corato-Zanarella 1 , Michal Lipson 1
Affiliation  

On-chip resonators are promising candidates for applications in a wide range of integrated photonic fields, such as communications, spectroscopy, biosensing, and optical filters, due to their compact size, wavelength selectivity, tunability, and flexible structure. The high quality (Q) factor is a main positive attribute of on-chip resonators that makes it possible for them to provide high sensitivity, narrow bandpass, and low power consumption. In this Tutorial, we discuss methods to achieve ultra-high Q factor on-chip resonators on a silicon nitride (Si3N4) platform. We outline the microfabrication processes, including detailed descriptions and recipes for steps such as deposition, lithography, etch, cladding, and etch facet, and then describe the measurement of the Q factor and methods to improve it. We also discuss how to extract the basic loss limit and determine the contribution of each loss source in the waveguide and resonator. We present a modified model for calculating scattering losses, which successfully relates the measured roughness of the waveguide interface to the overall performance of the device. We conclude with a summary of work done to date with low pressure chemical vapor deposition Si3N4 resonator devices, confinement, cross-sectional dimensions, bend radius, Q factor, and propagation loss.

中文翻译:

实现超高品质因数氮化硅谐振器的方法

片上谐振器由于其紧凑的尺寸、波长选择性、可调谐性和灵活的结构,在广泛的集成光子领域(例如通信、光谱学、生物传感和光学滤波器)中的应用是有希望的候选者。高质量 (Q) 因数是片上谐振器的主要积极属性,使它们能够提供高灵敏度、窄带通和低功耗。在本教程中,我们讨论了在氮化硅 (Si 3 N 4) 平台。我们概述了微制造过程,包括沉积、光刻、蚀刻、覆层和蚀刻面等步骤的详细描述和配方,然后描述 Q 因子的测量和改进方法。我们还讨论了如何提取基本损耗极限并确定波导和谐振器中每个损耗源的贡献。我们提出了一种用于计算散射损耗的修改模型,该模型成功地将波导界面的测量粗糙度与设备的整体性能联系起来。我们总结了迄今为止在低压化学气相沉积 Si 3 N 4谐振器装置、限制、横截面尺寸、弯曲半径、Q 因子和传播损耗方面所做的工作总结。
更新日期:2021-07-30
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