Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured with silicon dioxide masks. Selective area growth on silicon and 3C-silicon carbide was tested for both thermal and plasma deposited oxides. Multiple growth series showed that gallium nitride coverage of silicon dioxide vanished at growth temperatures of 870 °C for silicon substrates and at a surface temperature of 930 °C for 3C-silicon carbide substrates. Whereas gallium nitride is grown in its hexagonal form on silicon substrates, phase pure cubic gallium nitride could selectively be grown on the 3C-silicon carbide template. The cubic phase is verified by high resolution x-ray diffraction and low temperature photoluminescence measurements. The photoluminescence measurements prove that gallium nitride condensed selectively on the 3C-silicon carbide surfaces uncovered by silicon dioxide.

中文翻译：

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立方氮化镓在硅 (001) 和 3C-碳化硅 (001) 上的选择性区域生长

在等离子体辅助分子束外延装置中研究了立方氮化镓的选择性区域生长。380 μ μm厚的硅（001）和10 μ微米厚3C碳化硅（001），生长在500 μm 硅 (001)，用作衬底并用二氧化硅掩模构造。硅和 3C-碳化硅上的选择性区域生长被测试用于热和等离子沉积氧化物。多个生长系列表明，在硅衬底的 870°C 生长温度和 3C-碳化硅衬底的 930°C 表面温度下，二氧化硅的氮化镓覆盖消失。氮化镓在硅衬底上以其六边形形式生长，而相纯立方氮化镓可以选择性地生长在 3C-碳化硅模板上。立方相通过高分辨率 X 射线衍射和低温光致发光测量得到验证。光致发光测量证明氮化镓选择性地​​凝聚在被二氧化硅覆盖的 3C-碳化硅表面上。