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Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
Aip Advances ( IF 1.6 ) Pub Date : 2021-07-23 , DOI: 10.1063/5.0054062
Li-E. Cai 1, 2 , Chao-Zhi Xu 1 , Fei-Bing Xiong 1, 2 , Ming-Jie Zhao 1, 2 , Hai-Feng Lin 1, 2 , Hong-Yi Lin 1, 2 , Dong Sun 1, 2
Affiliation  

Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization field of three-layer staggered QWs in the blue spectral region and analyzed them in detail theoretically to explore the source and the dominant mechanism for improvement. Although theoretical studies indicate that the polarization field in QWs of staggered InGaN QWs is larger, the carrier confinement effect is stronger, and the carrier distribution is more uniform. Therefore, three-layer staggered QWs can improve overlapping of the hole and electron wave functions and then enhance the recombination rate so as to increase the optical output power and electroluminescence intensity. Moreover, the performance of the staggered structure C with the lowest indium content at the center of the well is better than that of the step-staggered structure B.

中文翻译:

改进了具有三层交错 QW 的 InGaN 发光二极管中的载流子限制和分布

与传统的 InGaN 量子阱 (QW) 相比,交错的 InGaN QW 提供了改进的光学和电子特性。本工作研究了蓝色光谱区三层交错QWs的载流子浓度、能带结构、空穴和电子波函数的重叠以及极化场,并对其进行了详细的理论分析,以探索其来源和改善的主要机制。虽然理论研究表明交错的 InGaN QWs 的 QWs 中的极化场更大,但载流子限制效应更强,载流子分布更均匀。因此,三层交错QW可以改善空穴和电子波函数的重叠,进而提高复合率,从而增加光输出功率和电致发光强度。而且,
更新日期:2021-07-30
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