The leakage mechanism of large size GaN p–i–n diodes is studied, and the possible reasons are analyzed. It is found that (i) the leakage current of most diode chips is not proportional to their area, and the leakage problem deteriorates seriously when the size of the device increases; (ii) the open circuit voltage of the photovoltaic device decreases with the increasing leakage current of GaN diodes; and (iii) low density nanotubes are detected in larger size GaN diodes, which is one of the important reasons for the large leakage of large size GaN diodes.

中文翻译：

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大尺寸GaN二极管漏电流特性研究

研究了大尺寸GaN p-i-n二极管的泄漏机理，分析了可能的原因。发现（i）大多数二极管芯片的漏电流与其面积不成正比，随着器件尺寸的增加，漏电流问题会严重恶化；(ii) 随着GaN二极管漏电流的增加，光伏器件的开路电压降低；(iii) 在较大尺寸的GaN二极管中检测到低密度纳米管，这是造成大尺寸GaN二极管大量泄漏的重要原因之一。