Ga ₂ O ₃ power diodes with high voltage/current ratings, superior dynamic performance, robust reliability, and potentially easy-to-implement are a vital milestone on the Ga ₂ O ₃ power electronics roadmap. In this letter, a better tradeoff between fast reverse-recovery and rugged surge-current capability has been demonstrated in NiO/Ga ₂ O ₃ p-n heterojunction diodes (HJDs). With the double-layered p-NiO design, the HJD exhibits superior electrostatic performances, including a high breakdown voltage of 1.37 kV, a forward current of 12.0 A with a low on-state resistance of 0.26 Ω, yielding a static Baliga's figure of merit (FOM) of 0.72 GW/cm ² . Meanwhile, the fast switching performance has been observed with a short reverse recovery time in nanosecond timescale (11 ns) under extreme switching conditions of d i /d t up to 500 A/μs _. In particular, for a 9-mm ² HJD, a large surge current of 45 A has also been obtained in a 10-ms surge transient, thanks to the conductivity modulation effect. These results are comparable with those of the advanced commercial SiC SBDs and have significantly outperformed the past reported Ga ₂ O ₃ HJDs, fulfilling the enormous potential of Ga ₂ O ₃ in power applications.

中文翻译：

---

具有纳秒反向恢复和坚固的浪涌电流能力的 1.37 kV/12 A NiO/β-Ga2O3 异质结二极管

Ga ₂ O ₃功率二极管具有高电压/电流额定值、卓越的动态性能、强大的可靠性和易于实施的潜力，是Ga ₂ O ₃功率电子路线图上的一个重要里程碑 。在这封信中，NiO/Ga ₂ O ₃ pn 异质结二极管 (HJD)证明了快速反向恢复和坚固的浪涌电流能力之间的更好权衡 。采用双层 p-NiO 设计，HJD 具有优异的静电性能，包括 1.37 kV 的高击穿电压、12.0 A 的正向电流和 0.26 Ω 的低导通电阻，产生静态 Baliga 品质因数(FOM) 0.72 GW/cm ² . 同时，在 d 的极端开关条件下，在纳秒时间尺度 (11 ns) 内观察到快速开关性能和较短的反向恢复时间 ID t 高达 500 A/μs _。特别是对于 9-mm ² HJD，由于电导调制效应，在 10-ms 的浪涌瞬态中也获得了 45 A 的大浪涌电流。这些结果与先进的商用 SiC SBD 的结果相当，并且明显优于过去报道的 Ga ₂ O ₃ HJD，实现了 Ga ₂ O ₃在电源应用中的巨大潜力 。