In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO₂/TaO_x/TiN resistive memory device for a neuromorphic system. First, we verify the thickness and elemental characterization of the device stack through transmission electron microscopy (TEM) and an energy-dispersive X-ray spectroscopy (EDS) line scan. Volatile resistive switching with low compliance current is observed under the DC sweep in a positive bias. Uniform cell-to-cell and cycle-to-cycle DC I-V curves are achieved by means of a repetitive sweep. The mechanism of volatile switching is explained by the temporal generation of traps. Next, we initiate the accumulation of the conductance and a natural decrease in the current by controlling the interval time of the pulses. Finally, we conduct a neuromorphic simulation to calculate the pattern recognition accuracy. These results can be applicable to short-term memory applications such as temporal learning in a neuromorphic system.

中文翻译：

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Pt/HfO2/TaOx/TiN 短期存储器件的易失性电阻开关特性

在这项工作中，我们研究了 Pt/HfO ₂ /TaO _x的阈值转换和短期记忆可塑性用于神经形态系统的 /TiN 电阻式存储器件。首先，我们通过透射电子显微镜 (TEM) 和能量色散 X 射线光谱 (EDS) 线扫描验证了器件堆栈的厚度和元素特征。在正偏置的直流扫描下观察到具有低顺从电流的易失性电阻开关。通过重复扫描获得均匀的细胞间和循环间 DC IV 曲线。易失性切换的机制可以通过陷阱的时间生成来解释。接下来，我们通过控制脉冲的间隔时间来启动电导的积累和电流的自然减少。最后，我们进行了神经形态模拟来计算模式识别的准确性。