In this paper, an extended continuous class-F power amplifier (PA) is investigated, designed, and fabricated. The new auxiliary parameter \(\left(\beta +\alpha {\mathrm{cos}}^{2}\theta \right)\), is proposed to increase the efficiency in comparison with the old auxiliary parameter \(\left(1+\delta \mathrm{cos}\theta \right)\). A novel methodology based on the smith chart design space and the proposed auxiliary parameter is introduced and analyzed. The design methodology, by controlling harmonic interferences, expands the amplifier bandwidth to below 1 GHz (up to 200 MHz). The laterally diffused metal–oxide–semiconductor (LDMOS) is selected, and an optimal bias point for its best performance is considered. Also, microstrip feedback based on the low-impedance coupled line is designed to accomplish transistor unconditional stability. Then, a ladder network based on the radial lines is designed as a harmonic control circuit, which controls harmonics up to 5th into the proposed design space. To verify this design approach, an extended continuous class-F power amplifier is designed and fabricated to operate at 0.2–1.7 GHz frequency range. Measurement results of the implemented PA shown that the output power of 38–40.2 dBm and the power gain of 13–15.2 dB were obtained. In addition, the final PA achieved a remarkable 53–79% drain efficiency over the whole operation bandwidth.

在本文中，研究、设计和制造了一种扩展的连续 F 类功率放大器 (PA)。新的辅助参数\(\left(\beta +\alpha {\mathrm{cos}}^{2}\theta \right)\)与旧的辅助参数\(\left (1+\delta \mathrm{cos}\theta \right)\). 介绍和分析了一种基于史密斯图设计空间和建议的辅助参数的新方法。该设计方法通过控制谐波干扰将放大器带宽扩展到 1 GHz 以下（高达 200 MHz）。选择横向扩散金属氧化物半导体 (LDMOS)，并考虑其最佳性能的最佳偏置点。此外，基于低阻抗耦合线的微带反馈旨在实现晶体管的无条件稳定性。然后，将基于径向线的梯形网络设计为谐波控制电路，将高达 5 次的谐波控制在建议的设计空间中。为了验证这种设计方法，我们设计并制造了一个扩展的连续 F 类功率放大器，以在 0.2–1.7 GHz 频率范围内运行。实施 PA 的测量结果表明，获得了 38-40.2 dBm 的输出功率和 13-15.2 dB 的功率增益。此外，最终的 PA 在整个操作带宽上实现了 53-79% 的显着漏极效率。