In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless (GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) in 20 nm gate length. This paper obtains a subthreshold swing (SS) lower than 60 mV/decade, which is the critical point in conventional MOSFETs. Also, a low drain-induced barrier lowering (DIBL) has been achieved at 21 mV/V. A high I_on/I_off ratio ~ 4 × 10¹³ and shallow leakage current ~ 8 × 10^–19 A are shown. We investigate the influence of the channel length, doping concentration, gate dielectric, and nanowire diameter on the device characteristics and short-channel effects of the GAA-NWJL. Besides, subthreshold slope, DIBL, leakage current, I_on/I_off ratio, and band-to-band tunneling (BTBT) results have been analyzed. Lead zirconate titanate (PZT), as a ferroelectric material with negative capacitance (NC), is used at the top of the oxide region to obtain an ideal subthreshold swing at sub 60 mV/decade. Because of working in the sub-10 nm, quantum confinement impacts are considered. Furthermore, the 1D Landau–Khalatnikov (L–K) equations are considered in the structure simulations.

在我们的工作中，我们展示了具有负电容 (NC) 的 4H-SiC 无栅圆柱纳米线 (GAA-NWJL) 金属氧化物场效应晶体管 (MOSFET)，栅极长度为 20 nm。本文获得了低于 60 mV/decade 的亚阈值摆幅 (SS)，这是传统 MOSFET 的临界点。此外，已在 21 mV/V 下实现了低漏电势垒降低 (DIBL)。显示了高 I _on /I _off比 ~ 4 × 10 ¹³和浅漏电流 ~ 8 × 10 ^–19 A。我们研究了沟道长度、掺杂浓度、栅极电介质和纳米线直径对 GAA-NWJL 的器件特性和短沟道效应的影响。此外，亚阈值斜率，DIBL，漏电流，I_上/我_关比，带对带隧穿（BTBT）的结果进行了分析。锆钛酸铅 (PZT) 作为具有负电容 (NC) 的铁电材料，用于氧化物区域的顶部，以获得低于 60 mV/decade 的理想亚阈值摆幅。由于工作在亚 10 纳米，因此考虑了量子限制影响。此外，在结构模拟中考虑了 1D Landau-Khalatnikov (L-K) 方程。