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In-plane crystalline anisotropy of bulk β-Ga2O3
Journal of Applied Crystallography ( IF 6.1 ) Pub Date : 2021-07-29 , DOI: 10.1107/s1600576721006427
Xiaocui Ma , Rui Xu , Jianfang Xu , Leiying Ying , Yang Mei , Hao Long , Baoping Zhang

The anisotropy of X-ray diffraction scanning of (201) β-Ga2O3 bulk material has been investigated. Symmetric rocking curves (RCs) exhibit distinctly different broadening along different azimuths, with a maximum along [102] and a minimum along a direction rotated by 30° from [010]. Williamson–Hall analysis was applied to study possible factors causing the broadening in these RCs, including instrumental factors, mosaic tilt and coherent scattering. It was found that the RC broadening is determined by both isotropic mosaic tilt and anisotropy in the length over which the crystal structure is not disrupted by limiting factors such as grain boundaries or stacking faults, which we term the `lateral limited size'. In this case, the lateral limited size is governed by {200} stacking faults along the [102] direction and grain boundaries along the [010] direction. The result presents a new anisotropy characteristic of (201) β-Ga2O3.

中文翻译:

大块 β-Ga2O3 的面内结晶各向异性

( 2 01) β-Ga 2 O 3的X射线衍射扫描各向异性散装材料进行了研究。对称摇摆曲线 (RC) 沿着不同的方位角表现出明显不同的展宽,最大沿 [102],最小沿从 [010] 旋转 30° 的方向。Williamson-Hall 分析用于研究导致这些 RC 变宽的可能因素,包括仪器因素、镶嵌倾斜和相干散射。发现 RC 加宽是由各向同性镶嵌倾斜和长度各向异性决定的,在该长度上晶体结构不受晶界或堆垛层错等限制因素破坏,我们称之为“横向限制尺寸”。在这种情况下,横向限制尺寸由沿 [102] 方向的 {200} 堆垛层错和沿 [010] 方向的晶界控制。2 01) β-Ga 2 O 3
更新日期:2021-08-05
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