Low dielectric photoactive materials have significant potential as components in future microelectronics. Although a number of photosensitive groups have been used to construct photopatternable materials, it remains challenging to introduce these groups into polymer chains via facile yet controlled polymerization techniques. The present work demonstrates the synthesis of a new class of photoactive cyclosiloxane monomers having hybrid siloxane-carbosilane main chains. These compounds can be cured by applying ultraviolet radiation and heat to promote the reaction of the silacyclobutene units and form hyper-cross-linked cyclosiloxanes. The cured resins show high thermal stability (with T_5% values in the range of 460–550°C), low dielectric constants (2.36–2.76 at 10 MHz) and low dielectric losses (10⁻³ at 10 MHz). Thus, these polymers could possibly be used as high-performance dielectric materials.

中文翻译：

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硅杂环丁烷官能化环硅氧烷作为光活性前体用于高热稳定性、低介电常数和低介电损耗聚合物

低介电光敏材料作为未来微电子器件的组件具有巨大潜力。尽管许多光敏基团已被用于构建可光图案化材料，但通过简单但可控的聚合技术将这些基团引入聚合物链中仍然具有挑战性。目前的工作展示了一类具有杂化硅氧烷-碳硅烷主链的新型光活性环硅氧烷单体的合成。这些化合物可以通过施加紫外线辐射和热量来固化，以促进硅杂环丁烯单元的反应并形成高度交联的环硅氧烷。固化树脂显示出高热稳定性（T _5%值在 460-550°C 范围内）、低介电常数（10 MHz 时为 2.36-2.76）和低介电损耗（10⁻³在 10 MHz 时）。因此，这些聚合物有可能用作高性能介电材料。