Compositions of 0.2In2O3 + 0.8Ga2O3 and 0.4In2O3 + 0.6Ga2O3 were mixed and sintered at 1250∘C to fabricate In0.4Ga1.6O3 and In0.8Ga1.2O3 targets, and RF sputtering method was used to deposit In0.4Ga1.6O3 and In0.8Ga1.2O3 films by introducing pure Argon during the deposition process. After In0.4Ga1.6O3 and In0.8Ga1.2O3 films were deposited, we used the X-ray diffraction pattern to analyze their crystalline properties, the ultraviolet–visible-infrared spectrophotometry to measure their transmittance spectra in the wavelength range of 200–800 nm, an X-ray photoelectron spectroscopy to find their composition variation, and a Hall equipment to measure their electrical properties, including the carrier concentration, the mobility, and the resistivity. We found that the absorption edges of In2xGa2−2xO3 films were shifted to higher wavelength as x value increased from 0.2 to 0.4. We also found that the Hall parameters of In0.4Ga1.6O3 film could not be measured because of its high resistivity. Therefore, In0.8Ga1.2O3 film was used to fabricate thin-film transistor (TFT), and the electrical properties of the fabricated TFT were also well investigated.

中文翻译：

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In2xGa2−2xO3 基薄膜的沉积及其在薄膜晶体管制造中的应用

的组成0.2在2○3 + 0.8镓2○3和0.4在2○3 + 0.6镓2○3混合并在 1250 下烧结∘C 制造在0.4镓1.6○3和在0.8镓1.2○3靶材，采用射频溅射法沉积在0.4镓1.6○3和在0.8镓1.2○3通过在沉积过程中引入纯氩来薄膜。后在0.4镓1.6○3和在0.8镓1.2○3沉积薄膜，我们使用 X 射线衍射图分析它们的结晶性质，紫外-可见-红外分光光度法测量它们在 200-800 nm 波长范围内的透射光谱，X 射线光电子能谱来确定它们的组成变化，以及霍尔设备来测量它们的电性能，包括载流子浓度、迁移率和电阻率。我们发现吸收边在2X镓2-2X○3薄膜被转移到更高的波长，因为X值从 0.2 增加到 0.4。我们还发现，霍尔参数在0.4镓1.6○3由于其高电阻率，无法测量薄膜。所以，在0.8镓1.2○3薄膜用于制造薄膜晶体管（TFT），并且还对制造的TFT的电性能进行了很好的研究。