This work compares the performance of dielectric modulated (DM) based Ge-source dual material double gate (DMDG) Tunnel Field Effect Transistor (TFET) and conventional (C)-DMDG-TFET as label free biosensor through Technology Computer Aided Design (TCAD) simulator. Here, cavity is introduced both at source and drain sides of the fixed HfO ₂ dielectric to increase the capture area of biosensors. Sensitivity (S _n ) is extracted for both neutral and charged (positive/negative) biomolecules considering cavity is fully filled with different dielectric materials (k). We have reported the sensitivity with the variation in height of nanogap cavity (h _bio ) for neutral biomolecules in the cavity. The sensitivity of Ge-source DMDG-TFET is found higher than C-DMDG-TFET due to more conduction at the tunnel junction. Also, the subthreshold swing (SS), transfer characteristics, and I _ON /I _OFF ratio of these biosensors are reported for different k and h _bio considering neutral/charged biomolecules. The sensitivity of partially filled nanogaps with biomolecules like decreasing, increasing, concave, and convex step profiles are reported for both the biosensors. The dynamic range (DR) of both the biosensors are extracted in presence of positive and negative charged biomolecules. The response time of Ge-source DMDG-TFET is reported at different k. A comparative study of proposed biosensor with other reported work is discussed. Finally, the sensitivity is extracted for DMDG-TFET considering other source material like GaAs, InAs, Si-Ge hetero stacked (HS), GaAs-InAs HS.

中文翻译：

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基于介电调制锗源 DMDG TFET 的无标记生物传感器的灵敏度分析

这项工作通过技术计算机辅助设计 (TCAD) 比较了基于介电调制 (DM) 的 Ge-源双材料双栅极 (DMDG) 隧道场效应晶体管 (TFET) 和常规 (C)-DMDG-TFET 作为无标记生物传感器的性能模拟器。在这里，在固定 HfO ₂电介质的源极和漏极侧都引入了空腔， 以增加生物传感器的捕获面积。 考虑到空腔被不同的介电材料 (k) 完全填充，中性和带电（正/负）生物分子的灵敏度 (S _n ) 被提取。我们已经报告了随着纳米间隙腔高度变化的灵敏度（h _bio ) 用于腔中的中性生物分子。发现 Ge 源 DMDG-TFET 的灵敏度高于 C-DMDG-TFET，因为隧道结的传导性更强。此外，还报告了这些生物传感器的亚阈值摆幅 (SS)、转移特性和 I _ON / I _OFF比，用于不同的 k 和 h _bio考虑中性/带电生物分子。两种生物传感器都报告了部分填充的纳米间隙对生物分子的敏感性，如递减、递增、凹形和凸形台阶轮廓。两种生物传感器的动态范围 (DR) 都是在带正电荷和负电荷的生物分子存在下提取的。Ge 源 DMDG-TFET 的响应时间在不同的 k 下报告。讨论了拟议的生物传感器与其他报告工作的比较研究。最后，考虑到 GaAs、InAs、Si-Ge 异质堆叠 (HS)、GaAs-InAs HS 等其他源材料，提取 DMDG-TFET 的灵敏度。