We successfully fabricated the Al _0.58 Ga _0.42 N-based solar-blind ultraviolet (UV) Schottky type photodetectors (PDs). The crystalline quality, morphology and dislocation information of the Al _0.58 Ga _0.42 N epitaxial layer have been obtained by detailed characterizations of high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscope (TEM). In addition, the responsivity of the PD with cutoff wavelength of 260 nm is 0.15A/W at −5V and 0.12 A/W at 5 V, respectively. Detailed carrier transport models are explored to analyze the I-V-T characteristics measured between 300 and 425 K, in order to provide more information for analyzing the reverse leakage mechanisms in the Al _0.58 Ga _0.42 N solar-blind PD. It is convincingly demonstrated that thermionic-field emission and Poole–Frenkel emission can accurately describe the low-bias I-V characteristics and the high-bias I-V characteristics, respectively.

中文翻译：

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Ni/Au Al0.58Ga0.42N 肖特基型光电探测器的反向漏电流传输机制

我们成功地制造了 基于Al _0.58 Ga _0.42 N 的日盲紫外 (UV) 肖特基型光电探测器 (PD)。 通过高分辨率 X 射线衍射 (XRD)、原子力显微镜 (AFM) 和透射电子显微镜 (TEM) 的详细表征，获得了 Al _0.58 Ga _0.42 N 外延层的晶体质量、形貌和位错信息 。此外，截止波长为 260 nm 的 PD 的响应率在 -5V 时为 0.15A/W，在 5V 时为 0.12A/W。探索详细的载流子传输模型以分析在 300 到 425 K 之间测量的 IVT 特性，以便为分析 Al _{0.58 中}的反向泄漏机制提供更多信息 Ga _0.42 N 日盲 PD。令人信服地证明，热电子场发射和普尔-弗伦克尔发射可以分别准确地描述低偏置 IV 特性和高偏置 IV 特性。