Low-frequency noise has become one of the critical factors in ultra-scaled MOSFET devices, and is also effective as an evaluating tool in characterizing device structure and reliability. Here, the low-frequency noise in 14 nm-FinFET is studied, and its dependence on trap defects of high-k dielectric and interface is further experimentally investigated. By using NH ₃ /N ₂ thermal processing in high-k/metal gate (HKMG) module, the $1/{f}$ noise characteristics have been greatly improved. The dominating mechanism is quantitatively analyzed focusing on the defect trap density in bulk HfO ₂ and SiO ₂ interface based on the carrier number fluctuation model. Moreover, the carrier mobility and the bias temperature instability property of the FinFET devices are also enhanced which further confirms the improvement in low-frequency noise upon optimized thermal processing.

中文翻译：

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通过优化的高 k/金属栅极热处理改善 14 纳米 FinFET 中的低频噪声

低频噪声已成为超大规模 MOSFET 器件的关键因素之一，也是表征器件结构和可靠性的有效评估工具。在这里，研究了 14 nm-FinFET 中的低频噪声，并进一步通过实验研究了其对高 k 电介质和界面陷阱缺陷的依赖性。通过在高 k/金属栅极 (HKMG) 模块中使用 NH ₃ /N ₂热处理， $1/{f}$ 噪音特性得到了极大的改善。基于载流子数涨落模型，重点对体HfO ₂和SiO ₂界面的缺陷陷阱密度进行了定量分析 。此外，FinFET 器件的载流子迁移率和偏置温度不稳定性也得到增强，这进一步证实了优化热处理后低频噪声的改善。