A closely coupled double-channel (DC) structure realized on an 8-inch GaN-on-Si wafer is utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF linearity. The strong channel-to-channel coupling from this DC structure enables efficient transport of electrons between the two parallel channels to accommodate balanced carrier concentration and current density between the two channels. Consequently, the nonlinearity of source resistance under high current operations and the external bias dependence of cut-off frequencies could be substantially mitigated, leading to device linearity enhancement. Meanwhile, the DC structure enables simple top gate control that favors a high-yield planar process. Two-tone measurements at 4 GHz show that the DC GaN HEMT delivers an output 3 ^rd -order intermodulation point (OIP3) that is improved by 5.2 dB over a single-channel GaN HEMT.

中文翻译：

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具有紧密耦合双通道结构的 GaN-on-Si HEMT 的射频线性增强

在 8 英寸 GaN-on-Si 晶片上实现的紧密耦合双通道 (DC) 结构用于制造具有增强 RF 线性度的 GaN 高电子迁移率晶体管 (HEMT)。这种直流结构的强通道间耦合使两个平行通道之间的电子能够有效传输，以适应两个通道之间平衡的载流子浓度和电流密度。因此，大电流操作下源电阻的非线性和截止频率的外部偏置依赖性可以大大减轻，从而提高器件的线性度。同时，直流结构实现了简单的顶栅控制，有利于高产量的平面工艺。4 GHz 下的双音测量表明 DC GaN HEMT 提供了一个输出 ^3rd 阶互调点 (OIP3) 比单通道 GaN HEMT 提高了 5.2 dB。