We report enhancement-mode ${p}$ -channel heterojunction field-effect transistors (HFETs) without gate recess on a standard ${p}$ -GaN/AlGaN/GaN high electron mobility transistor (HEMT) platform. The ${p}$ -GaN in the gate region was partially passivated by a low-power hydrogen plasma treatment process, and the remaining active ${p}$ -GaN and the underlying AlGaN formed the ${p}$ -channel. The device showed a record low off-state leakage of $ < 10^{\text {-8}}$ A/mm and subthreshold swing ( SS ) of 123.0 mV/dec with a threshold voltage ( ${V} _{\text {th}}$ ) of −0.6 V and high-temperature stability up to 200 °C. These results indicate that the hydrogen plasma treatment is beneficial for suppressing leakages and preserving excellent material quality in the ${p}$ -channel. With the success of the ${p}$ -HFETs, the ${p}$ -GaN/AlGaN/GaN platform can enable the monolithic integration of GaN ${n}$ - and ${p}$ -channel transistors without the need for regrowth. This work represents a significant step towards the implementation of the GaN CMOS technology.

中文翻译：

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具有超低亚阈值摆幅的增强型栅极无凹槽 GaN 基 p 沟道异质结场效应晶体管

我们报告增强模式 ${p}$ -沟道异质结场效应晶体管（HFET），标准上没有栅极凹槽 ${p}$ -GaN/AlGaN/GaN 高电子迁移率晶体管 (HEMT) 平台。这 ${p}$ 栅极区的 -GaN 被低功率氢等离子体处理工艺部分钝化，剩余的活性 ${p}$ -GaN 和下面的 AlGaN 形成了 ${p}$ -渠道。该设备显示出创纪录的低断态泄漏 $ < 10^{\text {-8}}$ A/mm 和亚阈值摆幅 ( SS ) 为 123.0 mV/dec，阈值电压 ( ${V} _{\text {th}}$ ) -0.6 V 和高达 200 °C 的高温稳定性。这些结果表明，氢等离子体处理有利于抑制泄漏和保持优良的材料质量。 ${p}$ -渠道。随着该项目的成功 ${p}$ -HFETs， ${p}$ -GaN/AlGaN/GaN平台可实现GaN单片集成 ${n}$ - 和 ${p}$ 沟道晶体管，无需再生。这项工作代表了实现 GaN CMOS 技术的重要一步。