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Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2021-06-14 , DOI: 10.1109/led.2021.3088851
Ho-Nam Yoo , Bongsik Choi , Jong-Won Back , Ho-Jung Kang , Eunmee Kwon , Sungyong Chung , Jong-Ho Bae , Byung-Gook Park , Jong-Ho Lee

Retention characteristics of 3D NAND Flash cells are investigated at various temperatures ( ${T}$ ) depending on the degree of program and erase. The $\Delta {V}_{\text {th}}$ for each condition is compared to understand the degradation of the retention characteristics attributable to vertical loss and/or lateral diffusion. In addition, the relationship between Program/Erase (PE) window (PGM ${V}_{\text {th}}$ – Erase ${V}_{\text {th}}$ ) and $\Delta {V}_{\text {th}}$ are analyzed. In the case when PGM ${V}_{\text {th}}$ is the same, the $\Delta {V}_{\text {th}}$ decreases as the PE window decreases. At temperatures below 150 °C, $\Delta {V}_{\text {th}}$ and PE window show linear relationship, and as PE window decreases, $\Delta {V}_{\text {th}}$ also decreases to 0. On the other hand, at 250 °C, $\Delta {V}_{\text {th}}$ has a non-zero value even if PE window decreases to 0, thus has a non-linear relationship. The measurement results show that the lateral diffusion has a great influence on the short-term retention of 3D NAND flash cells.

中文翻译:

横向电荷扩散对 3D NAND 闪存单元保留特性的影响

研究了不同温度下 3D NAND 闪存单元的保留特性( ${T}$ ) 取决于编程和擦除的程度。这 $\Delta {V}_{\text {th}}$ 对每种条件进行比较,以了解可归因于垂直损失和/或横向扩散的保持特性的退化。此外,Program/Erase (PE) 窗口 (PGM) 之间的关系 ${V}_{\text {th}}$ – 擦除 ${V}_{\text {th}}$ ) 和 $\Delta {V}_{\text {th}}$ 进行了分析。在 PGM 的情况下 ${V}_{\text {th}}$ 是一样的, $\Delta {V}_{\text {th}}$ 随着 PE 窗口的减小而减小。在低于 150 °C 的温度下, $\Delta {V}_{\text {th}}$ 和 PE 窗呈线性关系,随着 PE 窗的减小, $\Delta {V}_{\text {th}}$ 也减小到 0。另一方面,在 250 °C 时, $\Delta {V}_{\text {th}}$ 即使 PE 窗口减小到 0 也具有非零值,因此具有非线性关系。测量结果表明,横向扩散对 3D NAND 闪存单元的短期保留有很大影响。
更新日期:2021-07-27
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