We report a heterojunction, nonvolatile memory (NVM) device with amorphous indium-gallium-zinc oxide (a – IGZO) and low-temperature polysilicon (LTPS) stack. The LTPS layer was achieved by blue laser annealing of amorphous silicon. The a – IGZO/LTPS heterojunction NVM exhibits a large threshold voltage $(\Delta {\mathsf {V}}_{\mathsf {Th}}({\mathsf {V}}))$ memory window of 19.2 V with prolonged operational stability. An increase in channel length (L) (from 2 to $20~\mu \text{m}$ ) exhibits a stable memory window. The neutral oxygen vacancy states in a – IGZO trap the carriers at a – IGZO/LTPS interface and then transforms into a metastable state, ( ${\mathsf {D}}^{\mathsf {O}}+ {\mathsf {h}}^{+}(2 {\mathsf {h}}^{+})\to {\mathsf {D}}^{+}/ {\mathsf {D}}^{++}$ or ${\mathsf {D}}^{\mathsf {O}}+ {\mathsf {e}}^{-}(2 {\mathsf {e}}^{-})\to {\mathsf {D}}^{-}/ {\mathsf {D}}^{--}$ ), which is the key to the operation of a – IGZO/LTPS heterojunction NVM.

中文翻译：

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用于存储器应用的非晶 InGaZnO/Poly-Si 共面异质结 TFT

我们报告了一种具有非晶氧化铟镓锌 (a – IGZO) 和低温多晶硅 (LTPS) 堆栈的异质结非易失性存储器 (NVM) 器件。LTPS 层是通过非晶硅的蓝色激光退火实现的。a – IGZO/LTPS 异质结 NVM 表现出很大的阈值电压 $(\Delta {\mathsf {V}}_{\mathsf {Th}}({\mathsf {V}}))$ 19.2 V 的内存窗口，具有更长的操作稳定性。通道长度 (L) 的增加（从 2 到 $20~\mu \text{m}$ ) 表现出稳定的内存窗口。- IGZO 中的中性氧空位在 - IGZO/LTPS 界面捕获载流子，然后转变为亚稳态，（ ${\mathsf {D}}^{\mathsf {O}}+ {\mathsf {h}}^{+}(2 {\mathsf {h}}^{+})\to {\mathsf {D} }^{+}/ {\mathsf {D}}^{++}$ 要么 ${\mathsf {D}}^{\mathsf {O}}+ {\mathsf {e}}^{-}(2 {\mathsf {e}}^{-})\to {\mathsf {D} }^{-}/ {\mathsf {D}}^{--}$ )，这是操作一个–IGZO/LTPS异质结NVM的关键。