The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes ( $\mu $ LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about $1~\mu \text{m}$ was fabricated in $\mu $ LED mesas ( $40\times 60\,\,\mu \text{m}^{2}$ ) by nanoimprint lithography. The nano-holes were etched straight through the $\mu $ LED active region to ensure that the filled QDs were in extremely close contact with the active region. The absorption efficiency and emission efficiency of QDs are effectively improved by NRET, resulting in a superhigh CCE in QD- $\mu $ LED hybrid devices. Compared to $\mu $ LED devices with conventional spin-coated QDs, the CCE of novel nano-hole $\mu $ LEDs with filled QDs has been enhanced by about 118%.

中文翻译：

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通过非辐射能量转移提高微发光二极管的量子点颜色转换效率

GaN 微型发光二极管中的量子点 (QD) 颜色转换效率 (CCE) ( $\亩 $ LED）通过非辐射能量转移 (NRET) 机制得到极大改善。一排深纳米孔，直径约为 $1~\mu \text{m}$ 被捏造 $\亩 $ LED台面（ $40\times 60\,\,\mu \text{m}^{2}$ ) 通过纳米压印光刻。纳米孔被直接蚀刻通过 $\亩 $ LED 有源区，以确保填充的 QD 与有源区极其紧密地接触。NRET有效地提高了QDs的吸收效率和发射效率，从而在QD- $\亩 $ LED 混合设备。相比 $\亩 $ 具有传统旋涂 QD 的 LED 器件，新型纳米孔的 CCE $\亩 $ 带有填充 QD 的 LED 增强了约 118%。