Wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaN HEMT devices is suggested. Two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{10}\mu \text{s}$ were evaluated. The extracted junction temperature and the measured saturation/linear current under repeated short circuit stresses suggest that the short circuit failure is attributed to the degradation in the drift region. The WLTVM could measure the transient potential change along the drift region during short circuit condition. The sample with lower short-circuit survivability showed a faster propagation of the high field traveling from the gate to the drain. The time the high electric field reaches the drain coincides with the time of the short circuit failure. In addition to providing the insight into the short circuit failure mechanism, wafer-level method can provide a quick and non-destructive evaluation of the short circuit capability before packaging devices.

中文翻译：

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使用瞬态测量估算 GaN HEMT 的短路能力

建议使用晶圆级瞬态电压测量 (WLTVM) 来估计 AlGaN/GaN HEMT 器件的短路能力。直流和开关特性相似但短路能力不同的两组样品分别为 4-7 和 $>{10}\mu \text{s}$ 被评估。在重复短路应力下提取的结温和测量的饱和/线性电流表明短路故障归因于漂移区的退化。WLTVM 可以测量短路条件下沿漂移区的瞬态电位变化。短路耐受性较低的样品显示出从栅极到漏极的高场传播速度更快。高电场到达漏极的时间与短路故障的时间一致。除了提供对短路故障机制的深入了解之外，晶圆级方法还可以在封装器件之前对短路能力进行快速且无损的评估。