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Highly Sensitive DNA Detection Beyond the Debye Screening Length Using CMOS Field Effect Transistors
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2021-06-17 , DOI: 10.1109/led.2021.3090035
Yi-Wei Chen , Michael S.-C. Lu

Field effect transistors are considered one of the key technologies to provide real-time and label-free biodetection. Direct detection in physiological solutions is, however, severely limited by the Debye charge-screening effect of the electrical double layer. Most measurements are therefore performed indirectly in diluted ionic-strength solutions. This study proposes a general technique based on modulation of the surface electric field of the CMOS (complementary metal oxide semiconductor) extended-gate field effect transistors (EGFETs) to investigate the screening effect on hybridized DNA (deoxyribonucleic acid) signals from 1 MHz to 15 MHz. The 32 EGFET sensor array exhibited a floating-gate potential change of 17.4 mV/log[DNA] from 1 fM to 100 pM with a near picomolar-level resolution and a response time below 8 minutes.

中文翻译:

使用 CMOS 场效应晶体管进行超出德拜筛选长度的高灵敏度 DNA 检测

场效应晶体管被认为是提供实时和无标记生物检测的关键技术之一。然而,生理溶液中的直接检测受到双电层德拜电荷屏蔽效应的严重限制。因此,大多数测量是在稀释的离子强度溶液中间接进行的。本研究提出了一种基于 CMOS(互补金属氧化物半导体)扩展栅场效应晶体管 (EGFET) 表面电场调制的通用技术,以研究对 1 MHz 至 15 MHz 的杂交 DNA(脱氧核糖核酸)信号的筛选效果兆赫。32 EGFET 传感器阵列表现出从 1 fM 到 100 pM 的 17.4 mV/log[DNA] 浮栅电位变化,分辨率接近皮摩尔级,响应时间低于 8 分钟。
更新日期:2021-07-27
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