Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., “0” and “1”) in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high-density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary-state memristor. We make use of the intrinsic sub-nanometer channel of pillar[5]arene and nanometer channel of a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 10³), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DP_TPAZ+TAPB can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 °C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[n]arene.

中文翻译：

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由柱[5]芳烃功能化二维亚胺聚合物薄膜实现的三元电导切换

如今，大多数制造存储器件都基于响应外加电场具有电双稳态性（即“0”和“1”）的材料。非常需要具有多级状态的存储设备以生产高密度和高效的存储设备。在此，我们报告了第一个实现三态忆阻器的多通道策略。我们利用柱[5]芳烃的本征亚纳米通道和二维亚胺聚合物的纳米通道构建具有多级通道的有源层，用于三元存储器件。获得了低阈值电压、长保留时间、清晰可辨的电阻状态、高开/关比（OFF/ON1/ON2=1 : 10 : 10 ³）和高三元产率（75%）。此外，基于2DP的柔性存储器件_TPAZ+TAPB在弯曲500次后仍能保持其稳定的三元记忆性能。该器件还具有出色的热稳定性，可耐受高达 300 °C 的温度。预计这项工作的结果将为具有良好热稳定性和低能耗的多态、柔性电阻存储器开辟可能性，并拓宽柱[ n ]芳烃的应用。