This paper, numerically assesses the analog/RF performance of nanoscale negative capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The simulation study is based on the non-equilibrium Green's function (NEGF) formalism in conjunction with the self-consistent device electrostatics, including the Landau–Khalatnikov (L-K) equation and the ballistic transport conditions. The proposed nanoscale analog transistor is endowed with four multi-objective improvement assets, namely, gate-all-around (GAA) configuration for the best gate control, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) gating structure for boosting the device performance via the NC feature, junctionless paradigm for simplifying the fabrication processes, and the carbon nanotube-based channel due to its exploitable transport benefits. The quantum simulation study investigates the transfer and output characteristics, transconductance, drain conductance, transconductance efficiency, gate capacitance, and cut-off frequency. We have also studied and analyzed the impact of ferroelectric thickness on the device figures of merit. The NCJL-CNTFET have exhibited several distinctive behaviors, namely, shift in threshold voltage, negative differential resistance, and negative conductance. Moreover, it has been found that utilizing the NC paradigm can significantly boost the performance of the JL-CNTFET in terms of transconductance, gate capacitance, and transconductance efficiency. Our encouraging results make the studied NCJL-CNTFET a promising candidate for high-performance and low-power analog/RF applications.

本文对纳米级负电容无结碳纳米管场效应晶体管 (NCJL-CNTFET) 的模拟/射频性能进行了数值评估。模拟研究基于非平衡格林函数(NEGF) 形式主义与自洽设备静电学相结合，包括 Landau-Khalatnikov (LK) 方程和弹道传输条件。所提出的纳米级模拟晶体管具有四个多目标改进资产，即用于最佳栅极控制的环栅 (GAA) 配置、用于提升器件的金属-铁电-金属-绝缘体-半导体 (MFMIS) 门控结构通过 NC 特性、用于简化制造过程的无连接范式以及基于碳纳米管的通道（由于其可利用的传输优势）来提高性能。量子模拟研究调查传输和输出特性、跨导、漏电导、跨导效率、栅极电容和截止频率。我们还研究和分析了器件品质因数上的铁电体厚度。NCJL-CNTFET 表现出几种独特的行为，即阈值电压偏移、负差分电阻和负电导。此外，已经发现利用 NC 范式可以显着提高 JL-CNTFET 在跨导、栅极电容和跨导效率方面的性能。我们令人鼓舞的结果使所研究的 NCJL-CNTFET 成为高性能和低功耗模拟/RF 应用的有希望的候选者。