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Domains and domain dynamics in fluorite-structured ferroelectrics
Applied Physics Reviews ( IF 15.0 ) Pub Date : 2021-04-30 , DOI: 10.1063/5.0047977
Dong Hyun Lee 1 , Younghwan Lee 2 , Kun Yang 1 , Ju Yong Park 1 , Se Hyun Kim 1, 3 , Pothala Reddi Sekhar Reddy 1 , Monica Materano 4 , Halid Mulaosmanovic 4 , Thomas Mikolajick 4, 5 , Jacob L. Jones 2 , Uwe Schroeder 4 , Min Hyuk Park 1
Affiliation  

Ferroelectricity in fluorite-structured ferroelectrics such as HfO2 and ZrO2 has been attracting increasing interest since its first publication in 2011. Fluorite-structured ferroelectrics are considered to be promising for semiconductor devices because of their compatibility with the complementary metal–oxide–semiconductor technology and scalability for highly dense information storage. The research on fluorite-structured ferroelectrics during the first decade of their conceptualization has been mainly focused on elucidating the origin of their ferroelectricity and improving the performance of electronic devices based on such ferroelectrics. Furthermore, as is known, to achieve optimal performance, the emerging biomimicking electronic devices as well as conventional semiconductor devices based on the classical von Neumann architecture require high operating speed, sufficient reliability, and multilevel data storage. Nanoscale electronic devices with fluorite-structured ferroelectrics serve as candidates for these device systems and, thus, have been intensively studied primarily because in ferroelectric materials the switching speed, reliability, and multilevel polarizability are known to be strongly correlated with the domains and domain dynamics. Although there have been important theoretical and experimental studies related to domains and domain dynamics in fluorite-structured ferroelectrics, they are yet to be comprehensively reviewed. Therefore, to provide a strong foundation for research in this field, herein, domains, domain dynamics, and emerging applications, particularly in neuromorphic computing, of fluorite-structured ferroelectrics are comprehensively reviewed based on the existing literature.

中文翻译:

萤石结构铁电体中的畴和畴动力学

萤石结构铁电体中的铁电性,如 HfO 2和 ZrO 2自 2011 年首次出版以来,它一直吸引着越来越多的兴趣。萤石结构的铁电体被认为在半导体器件中很有前景,因为它们与互补金属氧化物半导体技术的兼容性和高密度信息存储的可扩展性。在萤石结构铁电体概念化的第一个十年期间,其研究主要集中在阐明其铁电体的起源和提高基于此类铁电体的电子器件的性能。此外,众所周知,为了实现最佳性能,新兴的仿生电子器件以及基于经典冯诺依曼架构的传统半导体器件需要高运行速度、足够的可靠性和多级数据存储。具有萤石结构铁电体的纳米级电子器件作为这些器件系统的候选材料,因此得到了深入研究,主要是因为在铁电材料中,已知开关速度、可靠性和多级极化率与畴和畴动力学密切相关。尽管在萤石结构的铁电体中已经有与畴和畴动力学相关的重要理论和实验研究,但它们还有待全面审查。因此,为了为该领域的研究提供坚实的基础,本文基于现有文献全面回顾了萤石结构铁电体的领域、领域动力学和新兴应用,特别是在神经形态计算方面。
更新日期:2021-04-30
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