Charge carrier lifetime is an important parameter for semiconductor materials. This study proposes a dynamic calibration method for injection-dependent carrier lifetime measurements. This method is based on the comparison between lifetime measurements under quasi-steady-state and non-quasi-steady-state conditions. The proposed method is first demonstrated by numerical simulation. Experimental data are subsequently used to compare the proposed method with conventional calibration methods, demonstrating good agreement between the methods. Furthermore, the calibration method is found to be much less sensitive to measurement noise. When applied to photoluminescence-based carrier lifetime measurements, the proposed method also provides the net bulk doping concentration.

中文翻译：

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一种用于依赖注入的载流子寿命测量的动态校准方法

电荷载流子寿命是半导体材料的一个重要参数。本研究提出了一种用于依赖注入的载流子寿命测量的动态校准方法。该方法基于准稳态和非准稳态条件下的寿命测量值之间的比较。所提出的方法首先通过数值模拟来证明。随后使用实验数据将所提出的方法与传统的校准方法进行比较，证明这些方法之间具有良好的一致性。此外，发现校准方法对测量噪声不太敏感。当应用于基于光致发光的载流子寿命测量时，所提出的方法还提供净体掺杂浓度。