This work aimed to develop an innovative composite material consisting of graphene oxide films coated with silver nanowires (AgNWs)/poly(3-hexylthiophene) (P3HT). Translucent chemically reduced graphene oxide (CGO) films, presenting electrical conductivity of ca. 5.2 × 10¹ S/m, as well as graphene oxide (GO) films, have been coated with high aspect ratio AgNWs (78 ± 20 nm diameter and ca. 10-µm length) and undoped P3HT, by casting and dip-coating. The presence of AgNWs favored the formation of H-aggregates of P3HT, both in toluene solution and in the films, lowering the degree of ordering of P3HT chains. The nanowires also tend to agglomerate in the presence of the conjugated polymer during the preparation of casted and dip-coating films from toluene solutions. Thus, AgNWs/P3HT films presented capacitive impedances similar to that of dielectric materials, while AgNWs/P3HT/CGO films showed behavior of resistive materials with conductivities between 1.5 and 4.2 × 10¹ S/m. Impedance and UV–Vis results also suggest that casted films present a better organization of P3HT chains than those deposited by dip-coating.

这项工作旨在开发一种创新的复合材料，该材料由涂有银纳米线 (AgNW)/聚（3-己基噻吩）（P3HT）的氧化石墨烯薄膜组成。半透明的化学还原氧化石墨烯 (CGO) 薄膜，导电性约为 5.2 × 10 ¹S/m 以及氧化石墨烯 (GO) 薄膜已通过浇铸和浸涂涂覆有高纵横比的 AgNW（直径为 78 ± 20 nm，长度约为 10 µm）和未掺杂的 P3HT。AgNW 的存在有利于在甲苯溶液和薄膜中形成 P3HT 的 H-聚集体，从而降低 P3HT 链的有序度。在由甲苯溶液制备浇铸和浸涂膜期间，纳米线在共轭聚合物的存在下也倾向于附聚。因此，AgNWs/P3HT 薄膜表现出与介电材料相似的电容阻抗，而 AgNWs/P3HT/CGO 薄膜表现出电导率介于 1.5 和 4.2 × 10 ¹之间的电阻材料的行为秒/米。阻抗和 UV-Vis 结果还表明，与通过浸涂沉积的薄膜相比，浇铸薄膜呈现出更好的 P3HT 链组织。