Abstract

The microstructure of gallium nitride epitaxial layers synthesized by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapour deposition (MOCVD) on nanoprofiled NP‒Si(001) substrates with and without an intermediate 3C‑SiC layer has been investigated by transmission electron microscopy (TEM). It is found that the GaN layer obtained by HVPE on a combined NP–Si(001)/SiC substrate has a relatively smooth surface morphology and satisfies the orientation relationships \({{(\bar {2}\bar {2}0)}_{{Si}}}\,||\,{{(\bar {2}110)}_{{{\text{GaN}}}}}\) and \({{(2\bar {2}0)}_{{{\text{Si}}}}}\,||\,{{(0\bar {1}10)}_{{{\text{GaN}}}}}\)with the substrate. At the same time, the GaN layers obtained by MOCVD exhibit a rough surface morphology and a texture with preferred grain orientations \({{[\bar {1}10]}_{{Si}}}\,||\,{{[\bar {2}110]}_{{GaN}}}\) on the nanoprofiled NP–Si(001) substrate with an angle of ∼4.5° between [111]_Si and [0001]_GaN and preferred orientations \({{[\bar {1}\bar {1}0]}_{{Si}}}\,||\,{{[\bar {2}110]}_{{GaN}}}\) and \({{[\bar {1}11]}_{{Si}}}\,||\,{{[0001]}_{{GaN}}}\)on the combined NP–Si(001)/SiC substrate.

中文翻译：

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在纳米异型 Si(001) 衬底上合成的外延 GaN 层的微观结构

摘要

通过透射电子显微镜研究了通过氢化物气相外延 (HVPE) 和金属有机化学气相沉积 (MOCVD) 在具有和不具有中间 3 C SiC 层的纳米异型 NP-Si(001) 衬底上合成的氮化镓外延层的微观结构(TEM)。发现在组合的NP-Si(001)/SiC衬底上通过HVPE获得的GaN层具有相对光滑的表面形貌并且满足取向关系\({{(\bar {2}\bar {2}0) }_{{Si}}}\,||\,{{(\bar {2}110)}_{{{\text{GaN}}}}}\)和\({{(2\bar { 2}0)}_{{{\text{Si}}}}}\,||\,{{(0\bar {1}10)}_{{{\text{GaN}}}}}\ )与基板。同时，通过 MOCVD 获得的 GaN 层表现出粗糙的表面形貌和具有优选晶粒取向的织构\({{[\bar {1}10]}_{{Si}}}\,||\,{ {[\bar {2}110]}_{{GaN}}}\)在纳米型 NP-Si(001) 衬底上，[111] _Si和 [0001] _GaN之间的角度为 ~4.5°，并且优选取向\ ({{[\bar {1}\bar {1}0]}_{{Si}}}\,||\,{{[\bar {2}110]}_{{GaN}}}\)和\({{[\bar {1}11]}_{{Si}}}\,||\,{{[0001]}_{{GaN}}}\)在组合的 NP–Si(001 )/SiC 衬底。