Integration of vanadium dioxide (VO₂) on flexible substrates can realize flexible devices which can modulate the photoelectric response triggered by temperature, electric field, laser, etc. But the preparation of high quality flexible films is still blocked due to the high-temperature condition for VO₂ growth. In this paper, a one-step procedure was proposed to prepare VO₂ thin films on low-priced natural mica substrate by radio frequency (RF) reactive magnetron sputtering with a pure V target in an atmosphere of Ar/O₂ gas mixture. Through optimizing the deposition temperature and thickness systematically, a high performance flexible VO₂ film was obtained. It demonstrated large resistance change of around 4.8 orders of magnitude, and giant terahertz (THz) switching ratio of around 86.1% across the phase transition. Moreover, the VO₂/Mica flexible film remained stable phase transition characteristic during the bending flexibility measurement. This work provides an alternative way to fabricate flexible VO₂ film and makes it a candidate for the applications in flexible oxide electronics.

二氧化钒（VO ₂）在柔性基板上的集成可以实现柔性器件，可以调节由温度、电场、激光等触发的光电响应。但由于高温条件，仍然阻碍了高质量柔性薄膜的制备VO ₂增长。在本文中，提出了一种一步法，在 Ar/O ₂气体混合物的气氛中，通过射频 (RF) 反应磁控溅射与纯 V 靶在低价天然云母衬底上制备 VO ₂薄膜。通过系统地优化沉积温度和厚度，高性能柔性 VO ₂膜获得。它展示了大约 4.8 个数量级的大电阻变化，以及整个相变过程中大约 86.1% 的巨太赫兹 (THz) 开关率。此外，VO ₂ /云母柔性薄膜在弯曲柔性测量过程中保持稳定的相变特性。这项工作提供了一种制造柔性 VO ₂薄膜的替代方法，并使其成为柔性氧化物电子学应用的候选者。