The impact of O₂ plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O₂ plasma treatment. The uniformity of O₂ plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O₂ plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 10³), long retention time for 10⁴ s at 85 °C. These results show that the surface modification with O₂ plasma on IWZO CBRAM device is a critical technique for next generation memory applications.

研究了 O ₂等离子体处理对作为导电桥随机存取存储器 (CBRAM) 的新型非晶氧化物 InWZnO (IWZO) 的影响。使用远程O ₂等离子体处理可以在IWZO表面获得高质量的薄膜。O ₂等离子体样品的均匀性优于对照样品，并且设置和复位电压更均匀且更小以适合存储器操作。此外，O ₂等离子体样品显示出优异的记忆性能，例如高开关耐久循环（高达3 × 10 ³）、 在85°C 下保持10 ⁴秒的长保留时间。这些结果表明，用 O _{2 进行}的表面改性 IWZO CBRAM 设备上的等离子体是下一代存储器应用的关键技术。