The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.

通过等离子体增强化学气相沉积生长的金刚石肖特基 pin 二极管的电气特性已从 DC 到 25 GHz 进行测量，并用于提取集总元件紧凑模型的小信号参数。该模型准确地再现了正向和反向偏置直流特性、电容-电压行为以及插入和反射损耗。金刚石的高导热性使二极管非常适合高功率雷达接收器保护器应用。我们证明在正向偏置下，单个二极管可以提供 14 dB 的输入功率衰减。对于自偏置限幅器应用，已使用二极管模型对具有背对背二极管的两级电路进行了仿真，以显示在 50 dBm 输入功率下的衰减大于 20 dB。