The thermal rectification has potential applications in the thermal management and thermal signal processing. By using the nonequilibrium molecular dynamics method, the thermal resistance of triangular pores in the silicon device is analyzed. The evident thermal rectification phenomenon has been detected in silicon device with triangular pores. It is found that the thermal rectification can be tuned through the angles and the distribution of pores. A moderate angle and pattered arrangement of triangular pores are preferable to achieve a higher thermal rectification ratio. The simulated thermal resistance caused by pores is on the order of ${10}^{-10}{\text{m}}^2\text{K}/\text{W}$ and the thermal rectification ratio can be up to 29.6%. Moreover, by designing the distributions of groups of triangular pores, the obtained thermal rectification ratio ranged from 10.0% to 27.5%. This work indicates that the silicon structures with pores are promising to be made into the thermal rectifier.

热整流在热管理和热信号处理方面具有潜在的应用。采用非平衡分子动力学方法，对硅器件中三角形孔的热阻进行了分析。在具有三角形孔的硅器件中检测到明显的热整流现象。发现可以通过孔的角度和分布来调整热整流。适度的角度和三角形孔的图案排列是优选的，以获得更高的热整流率。由孔隙引起的模拟热阻约为${10}^{-10}{\text{米}}^2\text{钾}/\text{宽}$热整流率可达29.6%。此外，通过设计三角形孔组的分布，获得的热整流率在10.0%到27.5%之间。这项工作表明，具有孔隙的硅结构有望被制成热整流器。