We present a model of the space charge limited (SCL) electron injection into a gap combined with trap-filled dielectric solid and vacuum or a gap combined with two different trap-filled dielectric solid. An optimized calculation method is proposed to calculate the SCL current density $J$ inside the gap under different gap voltages $V_{g}$ . The $n$ scaling of $J$ – $V_{g}^{n}$ varies in a different range of $V_{g}$ , which is described as the Ohm regime, trap-limited regime, and SCL regime. It is found that the $n$ scaling is dependent on electron mobility and relative length scale between two media, which indicates that traps in the dielectric have a profound impact on SCL electron transport properties.

中文翻译：

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空间电荷限制电流注入自由空间和陷阱填充固体

我们提出了空间电荷限制 (SCL) 电子注入与陷阱填充介电固体和真空相结合的间隙或与两种不同的陷阱填充介电固体相结合的间隙的模型。提出了一种优化的计算方法来计算SCL电流密度 $J$ 不同间隙电压下的间隙内部 $V_{g}$ . 这 $n$ 缩放比例 $J$ —— $V_{g}^{n}$ 在不同的范围内变化 $V_{g}$ ，被描述为欧姆机制、陷阱限制机制和 SCL 机制。据发现，该 $n$ 比例取决于两种介质之间的电子迁移率和相对长度比例，这表明电介质中的陷阱对 SCL 电子传输特性具有深远的影响。