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Modification of the Electronic Structure of Quasi-Free-Standing Graphene by the Adsorption and Intercalation of Mn Atoms
Journal of Experimental and Theoretical Physics ( IF 1.1 ) Pub Date : 2021-07-22 , DOI: 10.1134/s1063776121050101
A. A. Gogina 1 , A. G. Rybkin 1 , A. M. Shikin 1 , A. V. Tarasov 1 , I. I. Klimovskikh 1 , L. Petaccia 2 , G. Di Santo 2 , I. A. Eliseyev 3 , S. P. Lebedev 3 , V. Yu. Davydov 3
Affiliation  

Abstract

The influence of manganese atom intercalation on the electronic structure of graphene grown on Au/Co(0001)/W(110) and SiC(0001) substrates is experimentally studied by angle-resolved photoelectron spectroscopy. Dispersion dependences of the graphene π states at the \(\bar {K}\) point of the Brillouin zone are obtained for both systems using ultraviolet photoelectron spectroscopy, and these dependences exhibit shifts of the Dirac cone induced by manganese intercalation followed by annealing. The structure of the near-surface layers of the systems is investigated by X-ray photoelectron spectroscopy. An analysis of the core level lines indicates the possibility of formation of a thin Mn2Au layer on the graphene–Mn–Au interface and a quasi-two-dimensional Mn layer under graphene on the SiC substrate. A comprehensive Raman spectroscopy study of graphene on SiC demonstrates that the buffer layer remains coupled to the substrate and does not transform into an additional graphene layer after the Mn intercalation of this system. After intercalation, the amount of lattice defects in graphene increases.



中文翻译:

通过吸附和嵌入锰原子对准自立石墨烯的电子结构进行改性

摘要

通过角分辨光电子能谱实验研究了锰原子嵌入对在 Au/Co(0001)/W(110) 和 SiC(0001) 衬底上生长的石墨烯电子结构的影响。使用紫外光电子能谱获得了两个系统在布里渊区\(\bar {K}\)点处石墨烯 π 态的色散依赖性,这些依赖性表现出由锰嵌入和退火引起的狄拉克锥的位移。通过X射线光电子能谱研究系统近表面层的结构。核心能级线的分析表明可能形成薄的 Mn 2石墨烯-Mn-Au 界面上的 Au 层和 SiC 衬底上石墨烯下的准二维 Mn 层。对 SiC 上的石墨烯进行的综合拉曼光谱研究表明,缓冲层保持与基板耦合,并且在该系统嵌入 Mn 后不会转变为额外的石墨烯层。嵌入后,石墨烯中的晶格缺陷量增加。

更新日期:2021-07-23
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