This work reports an experimental study on the synthesis of hydrogenated amorphous silicon-carbon (a-SiC:H) films with improved antireflective and photo-luminescent characteristics. These films were prepared by plasma-enhanced chemical vapor deposition at a radio frequency of 13.56 MHz, varying the thermodynamic parameters of pressure, gas flows, and temperature. Silane (SiH${}_4$), methane (CH${}_4$), and hydrogen (H${}_2$) were the precursor gases. In a first experiment, composition in gas phase was varied and correlated to the composition in solid phase. Absorption spectra, conductivity, refractive index, optical gap, and photoluminescence (PL) were analyzed. Optical gap and fraction of carbon in gas phase showed a linear dependence with the atomic fraction of carbon in solid phase. Results indicated that the Si${}_{0.4}$C${}_{0.6}$ alloy exhibited a high PL as well as an optimal combination of optical gap and refractive index to be applied as antireflective coating. The subsequent optimization of PL was carried out by a fractional experiment, by varying pressure, H${}_2$ flow, and temperature. Results revealed that PL can be improved at high pressure, without H${}_2$ flow, and low temperature during glow discharge. Enhancement of PL was correlated to the proper concentration of silicon and carbon in the films, low dark conductivity, negative AM 1.5 conductivity, fluctuating current at low voltage, the increment of $\mathrm{Si}-{\mathrm{H}}_2$, $\mathrm{C}-{\mathrm{H}}_2$, and $\mathrm{C}\text{=}\mathrm{C}$ bonds, along with vibrational energies in the range of 3190–3585 cm${}^{-1}$.

中文翻译：

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热力学参数对射频等离子体增强化学气相沉积制备的减反射和光致发光涂层硅碳薄膜性能的影响

这项工作报告了一项关于合成氢化非晶硅碳 (a-SiC:H) 薄膜的实验研究，该薄膜具有改进的抗反射和光致发光特性。这些薄膜是通过等离子体增强化学气相沉积在 13.56 MHz 的射频下制备的，改变了压力、气流和温度的热力学参数。硅烷（SiH${}_4$), 甲烷 (CH${}_4$), 和氢 (H${}_2$) 是前体气体。在第一个实验中，气相中的组成发生变化并与固相中的组成相关联。分析了吸收光谱、电导率、折射率、光学间隙和光致发光 (PL)。气相中的光学间隙和碳的分数显示出与固相中碳的原子分数的线性相关性。结果表明，Si${}_{0.4}$C${}_{0.6}$合金表现出高 PL 以及光学间隙和折射率的最佳组合，可用作抗反射涂层。PL 的后续优化是通过分数实验进行的，通过改变压力，H${}_2$流量，温度。结果表明，PL 可以在高压下得到改善，而无需 H${}_2$流和辉光放电期间的低温。PL 的增强与薄膜中适当的硅和碳浓度、低暗电导率、负 AM 1.5 电导率、低电压下的波动电流、增量$\mathrm{硅}-{\mathrm{H}}_2$, $\mathrm{C}-{\mathrm{H}}_2$， 和 $\mathrm{C}\text{=}\mathrm{C}$ 键，以及 3190-3585 cm 范围内的振动能量${}^{-1}$.