In this paper, we have presented the influence of surface traps/states on RF and microwave performance of fully recessed Schottky anode AlGaN/GaN lateral Schottky barrier diode (L-SBD) using numerical modeling and simulation. During the etching/treatment of AlGaN or GaN surface, the surface traps are induced, whose physical modeling is proposed here. Through this study, the physical insights on the influence of surface states, near the 2DEG, on the DC and RF/microwave performance of the L-SBDs are presented. It was observed that induced donor states due to etching for recessed anode significantly affect the Schottky barrier and modify the tunneling behavior of anode/GaN interface. This influences the DC and RF/microwave characteristics of L-SBDs, which enhances the cut-off frequency of >140 GHz and high detector sensitivity of ${\beta }_V$ >1000 mV/mW.

在本文中，我们使用数值建模和仿真介绍了表面陷阱/状态对全凹式肖特基阳极 AlGaN/GaN 横向肖特基势垒二极管 (L-SBD) 的射频和微波性能的影响。在 AlGaN 或 GaN 表面的蚀刻/处理过程中，会产生表面陷阱，此处提出了其物理建模。通过这项研究，提出了关于 2DEG 附近表面状态对 L-SBD 的直流和射频/微波性能影响的物理见解。观察到由于凹进阳极蚀刻引起的施主状态显着影响肖特基势垒并改变阳极/GaN界面的隧穿行为。这会影响 L-SBD 的 DC 和 RF/微波特性，从而提高 >140 GHz 的截止频率和${\beta }_{伏}$ >1000 毫伏/毫瓦。