Abstract

In this paper, we prepared the Al₂O₃/ZrO₂/SiO₂/ZrO₂/Al₂O₃ (AZSZA) metal-insulator-metal (MIM) capacitors by atomic-layer-deposition technique. By increasing the thickness of SiO₂ from 0 nm to 3 nm, the quadratic capacitance voltage coefficients improved significantly from 2130 ppm/V² to −121 ppm/V² because of the offsetting effects of ZrO₂ and SiO₂ dielectric. Meanwhile, for our interested SiO₂=3nm sample, the capacitance density is 7.40 fF/µm² and the leakage current density is 3.08 × 10⁻⁸ A/cm² at 5 V. We also studied the leakage current conduction mechanism of AZSZA dielectric MIM capacitors and found that at high field the conduction mechanism was dominated by Poole Frenkel emission.

摘要

在本文中，我们采用原子层沉积技术制备了Al ₂ O ₃ /ZrO ₂ /SiO ₂ /ZrO ₂ /Al ₂ O ₃ (AZSZA) 金属-绝缘体-金属(MIM) 电容器。通过将SiO ₂的厚度从0 nm 增加到3 nm，由于ZrO ₂和SiO ₂电介质的抵消效应，二次电容电压系数从2130 ppm/V ²显着提高到-121 ppm/V ²。同时，对于我们感兴趣的 SiO ₂ =3nm 样品，电容密度为 7.40 fF/µm ²并且漏电流密度在 5 V 时为 3.08 × 10 ^-8 A/cm ²。我们还研究了 AZSZA 介电 MIM 电容器的漏电流传导机制，发现在高场下，传导机制主要由 Poole Frenkel 发射。