Abstract

We study the capacitance of piezoelectric metal–insulator–semiconductor junctions. The linearized macroscopic theories of piezoelectric dielectrics and semiconductors are used. An analytical solution is obtained with an explicit expression for the junction capacitance. The contribution from the semiconductor part is characterized by the Debye length. When the semiconductor part is long compared to the Debye length, the junction capacitance can be written as a serial connection of two capacitors of the insulator and semiconductor parts. Because of piezoelectric coupling, a charge-stress coefficient is introduced to describe the junction behavior completely.

中文翻译：

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关于压电金属-绝缘体-半导体结的电容

摘要

我们研究了压电金属-绝缘体-半导体结的电容。使用压电电介质和半导体的线性化宏观理论。使用结电容的显式表达式获得解析解。半导体部分的贡献以德拜长度为特征。当半导体部分比德拜长度长时，结电容可以写成绝缘体和半导体部分两个电容器的串联连接。由于压电耦合，引入了电荷-应力系数来完整地描述结行为。