Abstract

Thin films of [Ta₂O₅]_1-x-[TiO₂]_x, with x = 0.08, were deposited on quartz substrates (for optical study) and p- type mono- crystalline silicon (100) surfaces (for structural characterization and electrical measurements) by RF magnetron sputtering of [Ta₂O₅]_0.92-[TiO₂]_0.08, ceramic target, using argon as sputtering gas and oxygen as reactive gas. Films were deposited at room temperature and further annealed at 400, 500, 600 and 700 ⁰C, at ambient atmosphere. The observed XRD patterns show that the as- deposited and annealed films have crystalline structure. The spectral transmissions of the [Ta₂O₅]_1-x-[TiO₂]_x (x = 0.08) films were measured in UV-visible range. The low optical transmittance in as-deposited films may be due to the presence of unreacted tantalum along with Ta₂O₅ in the films. From the observed transmission spectra, refractive index, optical band gap, absorption coefficient, extinction coefficient, and thickness of prepared [Ta₂O₅]_0.92-[TiO₂]_0.08 films, have been calculated by Swanepoel’s envelope technique.

摘要

[Ta ₂ O ₅ ] _1-x -[TiO ₂ ] _x薄膜，x = 0.08，沉积在石英衬底（用于光学研究）和 p 型单晶硅（100）表面（用于结构表征）和电测量）通过射频磁控溅射 [Ta ₂ O ₅ ] _0.92 -[TiO ₂ ] _0.08陶瓷靶，使用氩气作为溅射气体和氧气作为反应气体。薄膜在室温下沉积并在 400、500、600 和 700 ⁰下进一步退火C、在环境气氛中。观察到的 XRD 图案表明沉积和退火的薄膜具有晶体结构。[Ta ₂ O ₅ ] _1-x -[TiO ₂ ] _x (x = 0.08) 薄膜的光谱透射率在紫外-可见光范围内测量。沉积态薄膜的低透光率可能是由于薄膜中存在未反应的钽和 Ta ₂ O ₅。从观察到的透射光谱、折射率、光学带隙、吸收系数、消光系数和制备的 [Ta ₂ O ₅ ] _0.92 -[TiO ₂ ] _{0.08 的}厚度 电影，已由斯瓦内普尔的信封技术计算。