In this work, self-assembled monolayers of a series of para-substituted phenylphosphonic acids were formed on the ITO substrate surface for the fabrication of perovskite-based solar cells. With the perovskite layer directly transferred by a stamping method on the SAM-modified ITO surface, followed by spin-coated PCBM layer, an inverted-type, hole-transport layer-free solar cell was fabricated. The device characteristics, such as open circuit voltage V_oc, short circuit current J_sc, and field factor FF, were analyzed with respect to the energy level alignment at the ITO/perovskite interface. The best power conversion efficiency was observed with ITO having work function closest to the valence band maximum of perovskite, giving an efficiency of 13.94 %, considerably higher than the 8.64 % from the bare ITO-based device.

在这项工作中，在 ITO 基板表面形成了一系列对位取代的苯基膦酸的自组装单层，用于制造基于钙钛矿的太阳能电池。通过在 SAM 改性的 ITO 表面上通过冲压方法直接转移钙钛矿层，然后旋涂 PCBM 层，制造出倒置型、无空穴传输层的太阳能电池。器件特性，如开路电压V _oc、短路电流J _sc和场因数 FF，针对 ITO/钙钛矿界面处的能级对齐进行了分析。在 ITO 的功函数最接近钙钛矿价带最大值的情况下观察到最佳功率转换效率，效率为 13.94%，远高于基于 ITO 的裸器件的 8.64%。