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Impurity effect on recrystallization and grain growth in severe plastically deformed copper
Materials Science and Engineering: A ( IF 6.4 ) Pub Date : 2021-07-21 , DOI: 10.1016/j.msea.2021.141786
Yao Jiang 1, 2, 3 , Rui Cong Gu 1 , Martin Peterlechner 2 , Yu Wei Liu 1 , Jing Tao Wang 1, 3 , Gerhard Wilde 2, 3
Affiliation  

The impurity effect on commercial purity copper (4 N and 3 N) was investigated by comparing their annealing induced recrystallization and grain growth behavior after severe plastic deformation. Equal channel angular pressing (ECAP) with additional cryogenic rolling was applied to produce equiaxed ultra-fine grained (UFG) and nano-laminated (NL) coppers with high stored excess energy. The stored excess energy increased with decreasing purity from 4 N to 3 N, whereas the grain boundary velocity and recrystallized grain size decreased for both UFG and NL Cu. In particular, the NL structures were found to be more sensitive to impurities than equiaxed ultra-fine grained ones, and consequently the abnormal grain growth at the early stages of recrystallization in NL 4 N Cu was effectively suppressed in NL 3 N Cu. The analysis of the grain growth rate during recrystallization, using the microstructural path methodology (MPM), demonstrates that the correlation between the abnormal grain growth and the significantly enhanced grain boundary mobility cannot be solely explained by the high stored excess energy. Under all conditions, the impurity drag effect poses a kinetic constraint on the rate-controlling mechanism for grain boundary migration.



中文翻译:

杂质对严重塑性变形铜再结晶和晶粒长大的影响

通过比较严重塑性变形后的退火诱导再结晶和晶粒生长行为,研究了杂质对商业纯铜(4 N 和 3 N)的影响。等通道角挤压 (ECAP) 和额外的低温轧制被应用于生产具有高储存过剩能量的等轴超细晶粒 (UFG) 和纳米层压 (NL) 铜。储存的过剩能量随着纯度从 4 N 降低到 3 N 而增加,而 UFG 和 NL Cu 的晶界速度和再结晶晶粒尺寸均降低。特别是,发现NL结构比等轴超细晶粒结构对杂质更敏感,因此NL 4 N Cu再结晶早期的异常晶粒生长在NL 3 N Cu中得到有效抑制。使用微观结构路径方法 (MPM) 对再结晶过程中的晶粒生长速率进行的分析表明,异常晶粒生长与显着增强的晶界迁移率之间的相关性不能仅由高储存的过剩能量来解释。在所有条件下,杂质拖曳效应对晶界迁移的速率控制机制构成动力学约束。

更新日期:2021-07-26
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