Ruthenium (III)–pyridine (Ru-Py) complex has been synthesized and characterized by NMR, IR, UV–Vis, fluorescence spectroscopy and HRMS. The crystal structure of the Ru-Py complex was determined by X-ray crystallography. The Ru-Py complex was coated on a p-type Si semiconductor by a spin coating method to obtain a Schottky barrier diode (SBD) device. Basic electrical parameters of the obtained Al/p-Si/Al MS and Al/Ru-Py/p-Si/Al SBD devices were calculated by using thermionic emission (TE) theory such as ideality factor (n) and barrier height (Φ_b). From the current–voltage (I–V) measurements, the n value of the reference Al/p-Si/Al MS structure was 1.55 and the Al/Ru-Py/p-Si/Al SBD structure was 1.24 at room temperature. The Ru-Py complex as interface material made the device behave more ideally and decreased the value of the ideality factor. Φb values of the reference MS and SBD devices were calculated as 0.67 and 0.78 eV, respectively. The presence of Ru-Py complex films in the device structure increased the barrier height. Additionally, using the C⁻²–V graph obtained from frequency-dependent C–V measurements, the diffusion potential (V_d), acceptor concentration (N_a), Fermi energy (E_f), barrier height (Φ_b) parameters of Al/Ru-Py/p-Si/Al device were calculated. Current–voltage (I–V) measurements of the device obtained with Ru-Py complex were taken in different lighting intensity. In the I–V characteristics, the reverse and forward bias current increased depending on the light. It was concluded that the Al/Ru-Py/p-Si/Al device is suitable for photodiode applications.

已经合成了钌 (III)-吡啶 (Ru-Py) 配合物，并通过 NMR、IR、UV-Vis、荧光光谱和 HRMS 对其进行了表征。Ru-Py 配合物的晶体结构由 X 射线晶体学确定。通过旋涂法将Ru-Py复合物涂覆在p型Si半导体上，得到肖特基势垒二极管（SBD）器件。利用热电子发射 (TE) 理论，如理想因子 (n) 和势垒高度 (Φ)，计算了所获得的 Al/p-Si/Al MS 和 Al/Ru-Py/p-Si/Al SBD 器件的基本电学参数_乙）。根据电流-电压 (I-V) 测量结果，在室温下，参考 Al/p-Si/Al MS 结构的 n 值为 1.55，而 Al/Ru-Py/p-Si/Al SBD 结构的 n 值为 1.24。Ru-Py配合物作为界面材料使器件表现更理想，并降低了理想因子的值。参考 MS 和 SBD 器件的 Φb 值分别计算为 0.67 和 0.78 eV。器件结构中 Ru-Py 复合膜的存在增加了势垒高度。此外，使用从频率相关的 C-V 测量中获得的 C ^-2 –V 图、扩散电位 (V _d )、受体浓度 (N _a )、费米能量 (E _f )、势垒高度 (Φ _b) 计算了 Al/Ru-Py/p-Si/Al 器件的参数。使用 Ru-Py 复合物获得的器件的电流-电压 (I-V) 测量值在不同的光照强度下进行。在 I-V 特性中，反向和正向偏置电流根据光线而增加。得出的结论是，Al/Ru-Py/p-Si/Al 器件适用于光电二极管应用。