Cu₂O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu₂O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu₂O thin films of 20–80 nm thickness with hole mobility up to 92 cm²V⁻¹s⁻¹ using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu₂O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu₂O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.

Cu ₂ O 是一种很有前途的 p 型半导体，用于低成本光伏和透明光电。然而，低成本和低温制备具有良好传输特性的 Cu ₂ O 薄膜仍然具有挑战性，从而限制了它们在设备中的广泛采用。在这里，我们报告了 20-80 nm 厚度的Cu ₂ O 薄膜，空穴迁移率高达 92 cm ² V ^-1 s ^-1在低于 260 °C 的温度下使用大气压空间原子层沉积，来自铜 (I) 六氟-2,4-戊二烯酸环辛二烯前体。拉曼光谱表明存在铜分裂空位，并表明高空穴迁移率可能与低浓度的浅受主缺陷相关。沉积薄膜的光学带隙可以在 2.08 eV 和 2.5 eV 之间调整，具体取决于沉积温度。制造了全氧化物半透明 Cu ₂ O/ZnO 太阳能收集器，其效率值可与包含更厚 Cu ₂ O 层的设备相媲美。我们的工作为实现具有成本效益的全氧化物太阳能收集器和其他（光）电子设备提供了一种有前途的方法。