We present the design, fabrication, and radiation testing of a custom 20-channel application-specific integrated circuit (ASIC) for amplification and digitization of microvolt signal levels from space instrumentation (e.g., thermopile sensors) operating in harsh space radiation environments. The ASIC is fabricated in a commercial 180-nm complementary metal oxide silicon (CMOS) process node using a combination of radiation hard by design and discrete-time analog signal processing to mitigate leakage, offset, 1/ $f$ , and thermal noise. The chip has an input-referred integrated noise voltage of 190 nV in a 240-Hz bandwidth. Irradiation with very high total ionizing dose (TID) and high-energy heavy ions was carried out to evaluate the chip’s radiation hardness. The chip’s postradiation performance evidenced parametric immunity to greater than 50 Mrad (Si) TID and no single-event latch-up up to at least 123.6 MeV-cm ² /mg linear energy transfer.

中文翻译：

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180-nm CMOS 中 RHBD 多通道数字化仪的 TID 和重离子性能

我们介绍了自定义 20 通道专用集成电路 (ASIC) 的设计、制造和辐射测试，用于放大和数字化来自在恶劣空间辐射环境中运行的空间仪器（例如，热电堆传感器）的微伏信号电平。ASIC 在商用 180 nm 互补金属氧化物硅 (CMOS) 工艺节点中制造，结合抗辐射设计和离散时间模拟信号处理，以减轻泄漏、偏移、1/ $f$ , 和热噪声。该芯片在 240Hz 带宽内具有 190nV 的输入参考集成噪声电压。进行了具有非常高的总电离剂量（TID）和高能重离子的辐照以评估芯片的辐射硬度。该芯片的辐射后性能证明了对大于 50 Mrad (Si) TID 的参数抗扰度，并且在高达至少 123.6 MeV-cm ² /mg 线性能量转移时没有单事件闭锁 。