Impact of total ionizing dose (TID) on the within-wafer variability of radiation-hardened (RH) silicon-on-insulator (SOI) wafers is investigated in this article. The within-wafer variability is measured by the front gate and back gate $I$ – $V$ characteristics of the transistors in 32 dies evenly distributed on wafer locations. The experimental results show the complex dependence of the within-wafer variability on TID: the within-wafer variability of RH SOI wafer is first weakened by TID irradiation and then rebounds. The evolution of net trapped charge induced by TID in buried oxide (BOX) is affected by positively charged silicon nanoclusters introduced by silicon ion implantation, which is responsible for the above complex dependence. Moreover, radiation hardness assurance method relying on sample testing of limited wafer locations is discussed, which can give the reasonable estimation of the within-wafer variability on TID irradiated devices.

中文翻译：

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TID 对辐射硬化 SOI 晶圆的晶圆内变异性的影响

本文研究了总电离剂量 (TID) 对辐射硬化 (RH) 绝缘体上硅 (SOI) 晶片的晶片内可变性的影响。晶圆内变异性由前栅极和后栅极测量 $1$ —— $V$ 均匀分布在晶圆位置的 32 个管芯中的晶体管的特性。实验结果表明晶圆内变异性对 TID 的复杂依赖性：RH SOI 晶圆的晶圆内变异性首先被 TID 照射减弱，然后反弹。由 TID 在掩埋氧化物 (BOX) 中引起的净捕获电荷的演变受到由硅离子注入引入的带正电荷的硅纳米团簇的影响，这是造成上述复杂依赖性的原因。此外，还讨论了依赖于有限晶片位置样品测试的辐射硬度保证方法，该方法可以对 TID 辐照设备的晶片内变异性进行合理估计。