Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and junction barrier Schottky (JBS) diodes. Simulations indicate that the reduction of power dissipation along the core of the ion track is responsible for the increased robustness of the devices that have higher breakdown voltage ratings. Implications for circuit design show that using a 3300-V power MOSFET provides a significant increase in SEB threshold margin compared to a 1200-V MOSFET, with minor impact on power dissipation during normal operation.

中文翻译：

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击穿电压对高压 SiC 功率 MOSFET 单次烧断容限的影响

离子和地面中子诱发单粒子烧毁 (SEB) 数据表明，更厚、更轻掺杂的外延 (epi) 区域显着增加了碳化硅 (SiC) 功率 MOSFET 和结势垒中发生离子诱发 SEB 的阈值肖特基 (JBS) 二极管。模拟表明，沿着离子轨道核心的功耗降低是具有更高击穿电压额定值的设备增强稳健性的原因。对电路设计的影响表明，与 1200V MOSFET 相比，使用 3300V 功率 MOSFET 可显着增加 SEB 阈值裕度，对正常运行期间的功耗影响较小。