Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in the Pt/LaMnO₃ (LMO)/Pt heterostructures. The nonvolatile unipolar memory is achieved by applying a negative bias, while the volatile threshold resistive switching is obtained under a positive bias. Additionally, the pristine low resistance state (LRS) could be switched to high resistance state (HRS) by the positive voltage sweeping, which is attributed to the conduction mechanism of Schottky emission. Subsequently, the insulator-to-metal transition in the LMO film due to formation of ferromagnetic metallic phase domain contributes to the volatile threshold resistive switching. However, the nonvolatile unipolar switching under the negative bias is ascribed to the formation/rupture of oxygen-vacancy conducting filaments. The simultaneously controllable transition between nonvolatile and volatile resistance switching by the polarity of the applied voltage exhibits great significance in the applications of in-memory computing technology.

在 Pt/LaMnO _{3 中}观察到非易失性单极性和易失性阈值电阻切换的共存(LMO)/Pt 异质结构。非易失性单极存储器是通过施加负偏压实现的，而易失性阈值电阻切换是在正偏压下获得的。此外，原始低电阻状态（LRS）可以通过正电压扫描切换到高电阻状态（HRS），这归因于肖特基发射的传导机制。随后，由于铁磁金属相畴的形成，LMO 膜中的绝缘体到金属的转变有助于易失性阈值电阻切换。然而，负偏压下的非易失性单极切换归因于氧空位导电丝的形成/破裂。